• 专利标题:   Modifying two-dimensional material photodetector by semi-metallic nanoparticles useful in field of micro-nano and semiconductor, comprises preparing molybdenum trioxide nanoparticles and transferring two-dimensional material flake to a silicon wafer by mechanical peeling.
  • 专利号:   CN115663058-A
  • 发明人:   GU X, CAI Z, NAN H, FU Q, WANG C, WU Q, XIAO S
  • 专利权人:   UNIV JIANGNAN
  • 国际专利分类:   H01L031/032, H01L031/0352, H01L031/102, H01L031/18
  • 专利详细信息:   CN115663058-A 31 Jan 2023 H01L-031/102 202314 Chinese
  • 申请详细信息:   CN115663058-A CN11350749 31 Oct 2022
  • 优先权号:   CN11350749

▎ 摘  要

NOVELTY - Modifying two-dimensional material photodetector by semi-metallic nanoparticles comprises (i) using porous anodic aluminum oxide mask method to prepare molybdenum trioxide nanoparticles on the silicon wafer, placing this silicon wafer in the plasma chamber of the non-parallel plate capacitively coupled plasma produced by the planar spiral inductance antenna, passing in hydrogen, turning on the plasma radio frequency power supply to excite the plasma, and converting molybdenum trioxide nanoparticles on the surface of the silicon wafer into MOx semi-metallic nanoparticles; (ii) transferring two-dimensional material flake to a silicon wafer by mechanical peeling, and then prepare a two-dimensional material photodetector decorated with semi-metallic nanoparticles on the top layer by the method on the silicon wafer to which the two-dimensional material sample is attached. USE - The photodetector is useful in the field of micro-nano and semiconductor (claimed). ADVANTAGE - The semi-metal plasmons material has great potential in developing high-performance infrared detection. The method is realized at normal temperature, the particle doping concentration is controllable, the shape is regular and uniformly distributed, the operation is simple, the controllability is strong, and the practicability of the optoelectronic device is strong. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: two-dimensional material photoelectric detector modified by semi-metal nano-particle; and optoelectronic device.