▎ 摘　　要

NOVELTY - A graphene field effect transistor quantum dot photoelectric detector has multilayer thin film structure, the multilayer thin film structure comprises a silicon substrate layer, a first insulating layer, a second insulating layer, a graphene channel layer, and a quantum dot a photosensitive dielectric layer and a source and a drain, the silicon substrate layer, the first insulating layer, the second insulating layer, the graphene channel layer and the quantum dot photosensitive medium layer are sequentially stacked from bottom to top, the source and the drain are respectively located on the left and right of the quantum dot photosensitive medium layer side. USE - Graphene field effect transistor quantum dot photoelectric detector. ADVANTAGE - The graphene field effect transistor quantum dot photoelectric detector can be prepared with effectively realizing the effective detection of the incident light. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing graphene field effect transistor quantum dot photoelectric detector.