▎ 摘　　要

NOVELTY - The method involves preparing graphene material and depositing high k gate medium on little defect substrate sample. The substrate sample is placed into ALD reaction chamber and the ray is remotely controlled. The delocalized large Pi bond is destroyed and suspension bond is formed. The water vapor is introduced and chemical absorption of graphene surface is performed until the substrate surface is saturated. A precusor source is introduced and high k gate medium is deposited on graphene surface. USE - Method for depositing high K gate medium on graphene surface atom layer. ADVANTAGE - The deposition process can be performed simply and reliably. Damage of graphene can be avoided. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for depositing high K gate medium on graphene surface atom layer. (Drawing includes non-English language text)