• 专利标题:   Producing graphene quantum dots, comprises e.g. introducing carbon-based layered structure, forming interlayer insert composite, placing interlayer composite on substrate and heat-treating, and applying voltage to substrate.
  • 专利号:   KR2020028594-A, KR2095795-B1
  • 发明人:   JUNG J H, JUNGWONSUK, KIM T
  • 专利权人:   DREAM FACTORY CO LTD, UNIV GACHON IND ACADEMIC COOP FOUND
  • 国际专利分类:   B82Y020/00, B82Y040/00, C01B032/19, C09K011/65
  • 专利详细信息:   KR2020028594-A 17 Mar 2020 C09K-011/65 202031 Pages: 13
  • 申请详细信息:   KR2020028594-A KR106835 07 Sep 2018
  • 优先权号:   KR106835

▎ 摘  要

NOVELTY - Producing graphene quantum dots, comprises (a) introducing a carbon-based layered structure into a reactor containing a solvent, (b) forming an interlayer insert composite by inserting an interlayer insert between each layer of the carbon-based layered structure, (c) placing interlayer composite on a substrate and heat-treating to weaken the interlayer attractive force of the interlayer composite, and (d) applying a voltage to the substrate to peel the intercalation composite to obtain graphene quantum dots. USE - The method is useful for producing graphene quantum dots. ADVANTAGE - The method does not use harmful chemical solvents or surfactants, is suitable to mass-produce high-quality graphene quantum dots, minimizes defects, improves electrical properties, and is simple and economical. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene quantum dots prepared by the above method.