▎ 摘　　要

NOVELTY - The method for preparing nitrogen-doped graphene, involves (1) providing a multilayer film substrate comprising silicon layer, silicon dioxide layer, amorphous silicon carbide layer, copper layer and nickel layer arranged sequentially, (2) performing nitrogen ion implantation on the surface of the nickel layer of the multilayer film substrate to obtain nitrogen-doped substrate, (3) annealing the nitrogen-doped substrate to obtain nitrogen-doped graphene. The amorphous silicon carbide layer is replaced with diamond-like carbon film. USE - Method for preparing nitrogen-doped graphene. ADVANTAGE - The method enables preparation of nitrogen-doped graphene with controlled doping amount of nitrogen atoms by controlling the ion implantation parameters, and provides nitrogen-doped graphene with electron mobility of 850 cm2.V-1.second-1.