• 专利标题:   Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.
  • 专利号:   KR2021038066-A
  • 发明人:   BAKWONYIL, KIM S H
  • 专利权人:   UNIV HANYANG IUCFHYU
  • 国际专利分类:   C01B032/186, C30B025/18, C30B029/02
  • 专利详细信息:   KR2021038066-A 07 Apr 2021 C30B-025/18 202142 Pages: 13
  • 申请详细信息:   KR2021038066-A KR120732 30 Sep 2019
  • 优先权号:   KR120732

▎ 摘  要

NOVELTY - Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating while injecting a graphene precursor into the reactor. USE - The method is useful for growing single crystal graphene on a metal substrate. ADVANTAGE - The method: realizes high quality with uniform physical properties; produces high-performance graphene in a large area in a short time; and is economical. The graphene has excellent electrical, mechanical, and optical properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for single crystal graphene.