▎ 摘　　要

NOVELTY - A transition metal dichalcogenide thin film is formed on a substrate by treating the substrate with metal organic material; and providing a transition metal precursor and chalcogen precursor around the substrate to synthesize a transition metal dichalcogenide on the substrate, where the transition metal precursor includes a transition metal element and the chalcogen precursor includes a chalcogen element. USE - Formation of transition metal dichalcogenide thin film on a substrate. ADVANTAGE - High-quality transition metal dichalcogenide thin film is formed on the surface of the substrate by treating surface of the substrate at high temperature using the metal organic material through the CVD process. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) forming a transition metal dichalcogenide thin film on a substrate which involves treating the substrate with a metal organic material; and synthesizing transition metal dichalcogenide on the substrate using an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process; and (2) forming a transition metal dichalcogenide thin film on a substrate which involves treating a substrate to provide a metal on a surface of the substrate, where the metal includes greater than or equal to 1 of aluminum (Al), titanium (Ti), and nickel (Ni); and depositing a transition metal dichalcogenide layer on the surface of the substrate, where treating the substrate and depositing the transition metal dichalcogenide are performed at process chamber temperatures of 300-500 degrees C.