• 专利标题:   Apparatus for forming graphene layer used in manufacture of nanoscale graphene semiconductor device, has graphite segment separated from support stand by relative motion, and substrate that is adhered to the separated graphite segment.
  • 专利号:   KR2014000473-A, KR1350385-B1
  • 发明人:   LEE Y S, KIM J H
  • 专利权人:   DH ENERGY ENVIRONMENT CORP
  • 国际专利分类:   B01J019/24, B01L003/02, B82B003/00, C01B031/02
  • 专利详细信息:   KR2014000473-A 03 Jan 2014 C01B-031/02 201434 Pages: 17
  • 申请详细信息:   KR2014000473-A KR067485 22 Jun 2012
  • 优先权号:   KR067485

▎ 摘  要

NOVELTY - The graphene layer forming apparatus (100) includes a micro-pipette which is adhered in contact with a highly orientated pyrolytic graphite which is supported by a support stand (110) and in which a pattern is formed. The support stand supports the highly orientated pyrolytic graphite and the substrate in which the pattern is formed. The graphite segment is separated from the support stand by relative motion, and the substrate is adhered to the separated graphite segment. USE - Apparatus for forming graphene layer used in manufacture of nanoscale graphene semiconductor device. ADVANTAGE - A single crystalline graphene layer or double layer graphene layer can be manufactured efficiently, quickly and more easily. Minute position control can be achieved. The thickness of the exfoliated highly orientated pyrolytic graphite can be controlled efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the graphene layer forming apparatus. Graphene layer forming apparatus (100) Support stand (110) Support stand driver (120) Leveling unit (123) Displacement sensor (130) Support post (140)