• 专利标题:   Preparation of quantum-dot LED device involves providing substrate comprising first electrode, cold treating or placing substrate at first temperature condition, depositing quantum dot solution to form quantum dot film layer, preparing second electrode on film layer.
  • 专利号:   CN114695823-A
  • 发明人:   HONG J, LAI X, YANG F, YAN Y, ZHANG J, AO Z
  • 专利权人:   TCL TECHNOLOGY GROUP CORP
  • 国际专利分类:   H01L051/50, H01L051/56
  • 专利详细信息:   CN114695823-A 01 Jul 2022 H01L-051/56 202275 Chinese
  • 申请详细信息:   CN114695823-A CN11639758 31 Dec 2020
  • 优先权号:   CN11639758

▎ 摘  要

NOVELTY - Preparation of quantum-dot LED device involves providing a substrate comprising first electrode, cold treating the substrate or placing the substrate at a first temperature condition, depositing a quantum dot solution on the substrate to form a quantum dot film layer, and preparing a second electrode on the quantum dot film layer. The absolute difference between first temperature, storage temperature and the cold treatment temperature of the quantum dot solution is 0-5℃. USE - Preparation of quantum-dot LED device (claimed). ADVANTAGE - The method can avoid the problem of uneven light emission of the quantum dot-LED device caused by falling of ligands of quantum dot material to the maximum extent, and can reduce the phenomenon of fluorescence quenching.