▎ 摘　　要

NOVELTY - Preparing graphene-based thin-film laminate, comprises conducting cycle N times, where cycle comprises: (a) contacting surface of graphene transferred onto substrate at room temperature with non-metal precursor gas and activating surface of graphene with plasma at same time; (b) performing first purging on non-metal precursor contacted and plasma-activated surface of graphene using inert gas; (c) contacting first-purged surface of graphene with metal precursor gas; and (d) performing second purging on metal precursor gas contacted surface of graphene using inert gas. USE - The method is useful for preparing graphene-based thin-film laminate which is useful in an organic light emitting device, a transistor (all claimed), touch sensors, semiconductor electrodes or devices, electromagnetic wave-shielding devices. ADVANTAGE - The method: provides the graphene-based thin-film laminate that improves the charge mobility, preferably electron mobility and reduces average sheet resistance; and enhances the conductivity of graphene using a highly conductive inorganic material and adjusting the number of cycles when preparing the graphene-based thin-film laminate. DETAILED DESCRIPTION - Preparing a graphene-based thin-film laminate, comprises conducting a cycle N times, where the cycle comprises: (a) contacting a surface of graphene transferred onto a substrate at room temperature with a non-metal precursor gas and activating the surface of graphene with plasma at the same time; (b) performing a first purging on the non-metal precursor contacted and plasma-activated surface of the graphene using an inert gas; (c) contacting the first-purged surface of the graphene with a metal precursor gas, where the metal precursor gas is an aluminum precursor gas or a zinc precursor gas; and (d) performing a second purging on the metal precursor gas contacted surface of the graphene using an inert gas, where the N times consist of at least one cycle using the aluminum precursor gas in step (c) and at least one cycle using the zinc precursor gas in step (c) and the N times are 60 times or less. INDEPENDENT CLAIMS are also included for: (1) a graphene-based thin-film laminate prepared using the method; (2) a graphene-based thin-film laminate (10) comprising a substrate (11), graphene (12) formed on the substrate, and aluminum-doped zinc oxide (AZO) film formed above a surface of the graphene; (3) an organic light emitting device comprising a first electrode comprising the graphene-based thin-film laminate, a hole injection layer formed above the first electrode, a hole transport layer formed above the hole injection layer, an emission layer formed above the hole transport layer, an electron transport layer formed above the emission layer, an electron injection layer formed above the electron transport layer, and a second electrode; and (4) a transistor comprising a gate layer, a substrate and an insulating layer formed above the gate layer, a source electrode and a drain electrode formed above the insulating layer, and the graphene-based thin-film laminate contacting the source electrode and the drain electrode and disposed in between. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of a graphene-based thin-film laminate prepared using the method. Graphene-based thin-film laminate (10) Substrate (11) Graphene (12) Aluminum oxide layer (13) Zinc oxide layer (14)