▎ 摘　　要

NOVELTY - Preparing graphene/diamond composite structure with high carrier concentration involves polishing and pickling single crystal diamond. The surface of the single crystal diamond obtained is coated with layer of metallic nickel, copper, chromium or copper-nickel alloy with thickness of 10-50 nanometer. The direct current jet plasma arc furnace is used to rapidly heat the single crystal diamond plated with metallic nickel, copper, chromium or copper-nickel alloy on the surface obtained in argon and hydrogen mixed plasma atmosphere. The metal-plated nickel, copper, chromium or copper-nickel alloy single crystal diamond are placed after rapid heat treatment in dilute acid to soak to obtain graphene/diamond composite structure. USE - Method for preparing graphene/diamond composite structure with high carrier concentration. ADVANTAGE - The method enables to prepare graphene/diamond composite structure with high carrier concentration that has high quality, surface carrier concentration and good conductivity, meets the application of high-frequency and high-power diamond electronic devices and solves technical problems of slow heating rate, multiple defects in the obtained graphene, and poor conductivity.