▎ 摘　　要

NOVELTY - The forming system has reactor (1) having gas inlet (11) which inputs process gas (70), and gas outlet (14) which outputs exhausted process gas after reaction. A substrate (20) is placed in reactor. A carbon-containing heating element (40) located in reactor and exposed to same atmosphere with substrate is used as heating source to heat substrate and as carbon source for forming graphene film on substrate. The substrate is heated by controlling feeding of process gas, and carbon is transported to substrate surface for graphene growth, and graphene sheet (45) is formed on substrate. USE - Forming system for forming graphene on substrate to be used as e.g. electrode material for power storage device and display, membrane material in electromechanical system, membrane for separation of gases, and chemical sensor. ADVANTAGE - Forms large area graphene film easily and safely by chemical vapor deposition (CVD). The number of pyrometers, or thermal couples, corresponds to number of heating elements so that temperature distribution is more uniform. Graphene sheet can be efficiently used as a transparent electrode since it has excellent conductivity and high uniformity. Desired conductivity can be obtained using only a small amount of graphene sheet and light penetration can thus be improved, when graphene sheet is used in the form of a conductive thin film in a display device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a structure for forming graphene film on substrate. Reactor (1) Gas inlet (11) Gas outlet (14) Substrate (20) Heating element (40) Graphene sheet (45) Process gas (70)