• 专利标题:   Direct method of growing patterned graphene involves forming mask layer having hole exposing site in which graphene is formed, on substrate, forming catalytic metal layer on mask layer, and forming graphene on catalytic metal layer.
  • 专利号:   KR2015094284-A, KR1564038-B1
  • 发明人:   PARK S J, KWON H J, KANG J W, KIM N Y
  • 专利权人:   GWANGJU INST SCI TECHNOLOGY
  • 国际专利分类:   C01B031/02, C23C016/26, C01B031/04
  • 专利详细信息:   KR2015094284-A 19 Aug 2015 C01B-031/02 201562 Pages: 13
  • 申请详细信息:   KR2015094284-A KR015377 11 Feb 2014
  • 优先权号:   KR015377

▎ 摘  要

NOVELTY - Direct method of growing patterned graphene involves forming a mask layer having hole exposing the site in which graphene is formed, on a substrate, forming a catalytic metal layer on the entire surface including the mask layer, and forming graphene on the surface of the catalytic metal layer. USE - Direct method of growing patterned graphene (claimed). ADVANTAGE - The method efficiently provides patterned graphene without carrying out separate transcription process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for patterned graphene.