▎ 摘　　要

NOVELTY - The reconfigurable Schottky diode (100) has a gate electrode layer (101). A gate dielectric layer (102) is arranged on one surface of the gate electrode layer. A channel layer (103) is a bipolar semiconductor and is arranged on one surface of the gate dielectric layer, which is back to the gate electrode layer. A source electrode (104) is arranged on one surface, back to the gate dielectric layer, of the channel layer, and Schottky contact is formed between the source electrode and the channel layer. A drain electrode (105) is arranged on one surface of the channel layer, which is back to the gate medium layer, and is in ohmic contact with the channel layer. USE - Reconfigurable Schottky diode for use in a machine vision system i.e. neural network image sensor for simulating a human eye system. ADVANTAGE - The channel layer is a bipolar semiconductor. The gate voltage can control the channel layer to change continuously between a P type and an N type. Schottky contact is formed between the source electrode and the channel layer, and ohmic contact is formed between the drain electrode and the channel layer, thus the gate voltage can control the channel layer to show the rectifying characteristic of the metal P type semiconductor Schottky diode and the rectifying characteristic of the metal N type semiconductor Schottky diode. The reconfigurability of the reconfigurable Schottky diode is achieved. DESCRIPTION OF DRAWING(S) - The drawing shows a structural schematic diagram of the reconfigurable Schottky diode. 100Reconfigurable schottky diode 101Gate electrode layer 102Gate dielectric layer 103Channel layer 104Source electrode 105Drain electrode