▎ 摘　　要

NOVELTY - Preparation of graphene on silicon carbide (SiC) substrate based on copper (Cu) film annealing and chlorine (Cl2) reaction comprises carrying out standard cleaning to SiC wafer; placing the cleaned SiC wafer in quartz tube; inletting mixed gas of argon (Ar) gas and Cl2 to quartz tube and reacting SiC and Cl2 at 700-1100 degrees C for 4-10 minutes; generating carbon film; placing the carbon surface of carbon film on Cu film; putting in Ar gas; annealing for 15-25 minutes at 900-1200 degrees C to generate graphene; and taking Cu film from the graphene sheet. USE - Preparation of graphene on SiC substrate (claimed) used for sealing gas and liquid. ADVANTAGE - The method has simple technique, high safety, and good continuity; provides smooth surface; and achieves low porosity.