• 专利标题:   Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.
  • 专利号:   US2015098891-A1, KR2015040606-A, KR1513136-B1, US9567223-B2
  • 发明人:   SONG Y W, PARK J H
  • 专利权人:   SONG Y W, PARK J H, KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04, C23C016/26, C23C016/46, C01B031/02, H01B001/04, H01B013/00
  • 专利详细信息:   US2015098891-A1 09 Apr 2015 C01B-031/04 201527 Pages: 26 English
  • 申请详细信息:   US2015098891-A1 US456550 11 Aug 2014
  • 优先权号:   KR119337

▎ 摘  要

NOVELTY - The manufacturing method involves introducing a supporting substrate in a reactor then preparing a crystalline alumina catalyst having catalytic activity on the supporting substrate to form an insulating substrate. The nano graphenes are grown on the insulating substrate to manufacture a graphene film including a graphene layer of the nano graphenes. Growing of the nano graphenes is accomplished by pyrolyzing carbon source included in a reactive gas to grow the nano graphenes on the insulating substrate. A metal catalyst is not used in growing the nano graphenes. USE - Manufacturing method of graphene film (claimed) used in e.g. electronic device, photo-electronic device. ADVANTAGE - Enables reuse of the substrate since detachment of graphene film from substrate becomes easy and prevents damaging of the substrate without leaving residual graphene on the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene film.