▎ 摘　　要

NOVELTY - The structure has a structure main body whose upper and lower parts are arranged with a silicon dioxide substrate, a silicon dioxide buffer layer and a high refractive index semiconductor layer. The silicon dioxide buffer layer is arranged with a reverse ridge-type nanometer layer. An upper surface of a rectangular coupling layer is arranged with the reverse ridge-type nanometer layer. The reverse ridge-type nanometer layer is arranged in a bottom part of the silicon dioxide buffer layer. The reverse ridge-type nanometer layer is formed as a silver metal layer. USE - Graphene-semiconductor double-ridge type mixed surface plasma waveguide structure. ADVANTAGE - The structure realizes high-bandwidth data transmission process. DETAILED DESCRIPTION - The rectangular coupling layer is formed as a graphene material layer. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene-semiconductor double-ridge type mixed surface plasma waveguide structure.