• 专利标题:   Manufacturing graphene, comprises heating a substrate, irradiating a target containing carbon source with pulse laser, and depositing by passing carbon fine particles generated from laser irradiated target through the substrate.
  • 专利号:   KR1493893-B1
  • 发明人:   LEE C, BYEONG J N
  • 专利权人:   INHA IND PARTNERSHIP INST
  • 国际专利分类:   B01J019/08, C01B031/02
  • 专利详细信息:   KR1493893-B1 17 Feb 2015 C01B-031/02 201517 Pages: 10
  • 申请详细信息:   KR1493893-B1 KR113637 25 Sep 2013
  • 优先权号:   KR113637

▎ 摘  要

NOVELTY - Manufacturing graphene, comprises (a) heating a substrate (15), (b) irradiating a target (14) containing carbon source with pulse laser (20), and (c) depositing by passing carbon fine particles generated from the laser irradiated target through the substrate. The laser is neodymium-doped yttrium aluminum garnet laser having wavelength of 266 nm. The neodymium-doped yttrium aluminum garnet laser has energy intensity of 1-1.2 J/cm2. The method is performed in a vacuum chamber (10) with internal pressure of 1x 10-5 to 9x 10-5 Torr. USE - The method id useful for manufacturing graphene (claimed). ADVANTAGE - The method is simple, produces graphene at relatively low temperature, and does not require separate transfer process and utilize metal catalyst. DETAILED DESCRIPTION - Manufacturing graphene, comprises (a) heating a substrate (15), (b) irradiating a target (14) containing carbon source with pulse laser (20), and (c) depositing by passing carbon fine particles generated from the laser irradiated target through the substrate. The laser is neodymium-doped yttrium aluminum garnet laser having wavelength of 266 nm. The neodymium-doped yttrium aluminum garnet laser has energy intensity of 1-1.2 J/cm2. The method is performed in a vacuum chamber (10) with internal pressure of 1x 10-5 to 9x 10-5 torr. The strength ratio of D peak based on the G peak of Raman spectrum of the graphene grown up on the substrate is less than or equal to 0.6. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the graphene deposition on the substrate by using pulse laser deposition equipment (Drawing includes non-English language text). Vacuum chamber (10) Window (12) Target (14) Substrate (15) Laser (20)