▎ 摘　　要

NOVELTY - A catalyst film (2) is formed on a substrate (1). Graphene (3) is grown on the catalyst layer. A gap for exposing the lower surface of the catalyst, and a catalyst film is removed from the gap. Thus, semiconductor device is manufactured. USE - Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, personal computer, radio base station, personal computer, motor drive transistor of electric vehicle and vehicle-mounted integrated circuit. ADVANTAGE - The method efficiently provides semiconductor device having excellent reliability, electron mobility and current density resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method of growing graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of semiconductor device. Substrate (1) Catalyst film (2) Graphene (3) Electrodes (4) Insulating film (5)