▎ 摘　　要

NOVELTY - A graphene is prepared without transferring substrate by providing substrate and depositing catalysis metal layer on the substrate; implanting carbon ion in the catalysis metal layer to form carbon atom saturated plane; putting the substrate in a heating vacuum tube, and vacuumizing to first pressure; injecting mixed gas which is used as protective atmosphere to the vacuum pipe, raising pressure in the vacuum tube to second pressure, and annealing the substrate; and corroding catalysis metal layer to obtain the graphene film on the substrate. USE - Method for preparing graphene without transferring substrate (claimed). ADVANTAGE - The method simplifies the process for preparing graphene and is capable of preparing graphene film on any substrate without transferring, which will not bring damage and pollution of graphene structure and realize application of high-quality graphene on the substrate needed. DETAILED DESCRIPTION - Preparing graphene without transferring substrate comprises: (A) providing substrate and depositing catalysis metal layer on the substrate; (B) implanting carbon ion in the catalysis metal layer via ion implantation technique to form carbon atom saturated plane and making the carbon atom saturated plane at a set depth of the catalysis metal layer; (C) putting the substrate in a heating vacuum tube, and vacuumizing to first pressure; (D) injecting mixed gas which is used as protective atmosphere to the vacuum pipe, raising pressure in the vacuum tube to second pressure, and annealing the substrate with high temperature under the protective atmosphere; and (E) corroding catalysis metal layer to obtain the graphene film on the substrate. DESCRIPTION OF DRAWING(S) - The drawing is a schematic view of substrate to form graphene thin film. Substrate (1) Graphene thin film (4)