▎ 摘　　要

NOVELTY - Method of n-type doping of graphene involves introducing phosphorus-containing and hydrogen-containing dopant fluid to surface of graphene under effective conditions in a vacuum chamber at pressure of 10-50 torr, to dope the graphene with phosphine fragments each containing phosphorus in molecular combination with hydrogen. The phosphorus-containing and hydrogen-containing dopant fluid is chosen from phosphine, starting phosphine fragments and phosphine derivative. The doping is substitutional doping of phosphine fragments into the graphene. USE - Method of n-type doping of graphene used for n-doped graphene composition e.g. supported graphene composition for multilayered graphene composition, graphene field-effect transistor and electronic device (all claimed). ADVANTAGE - The method provides n-doped graphene having excellent electrical property. The graphene field-effect transistor obtained using the n-doped graphene composition has improved high current-carrying capacity, excellent thermal conductivity, and low-voltage operational potential. The silicon carbide used in the method has high thermal conductivity and electric-field breakdown strength, and very low coefficient of thermal expansion. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) formation of n-doped graphene, which involves growing epitaxial graphene by carbon deposition on a substrate layer and simultaneously introducing phosphorus-containing and hydrogen-containing dopant fluid to surface of graphene under effective conditions in a vacuum chamber at pressure of 10-50 torr, to dope the graphene with phosphine fragments each containing phosphorus in molecular combination with hydrogen. The phosphorus-containing and hydrogen-containing dopant fluid is chosen from phosphine, starting phosphine fragments and phosphine derivatives. The substrate layer is chosen from silicon(111), silicon(100) and silicon carbide; and (2) n-doped graphene composition, which comprises graphene and phosphine fragments which are substitutionally doped within the graphene.