• 专利标题:   Production of highly oriented graphitic film for microelectronic device involves dispensing and depositing graphene oxide or chemically functionalized graphene dispersion on supporting substrate and thermally reducing after removing medium.
  • 专利号:   US2015284253-A1, US9382117-B2
  • 发明人:   ZHAMU A, JANG B Z
  • 专利权人:   ZHAMU A, JANG B Z, NANOTEK INSTR INC
  • 国际专利分类:   B05D003/02, B05D003/12, C01B031/04, C01B031/02
  • 专利详细信息:   US2015284253-A1 08 Oct 2015 C01B-031/04 201570 Pages: 35 English
  • 申请详细信息:   US2015284253-A1 US999912 03 Apr 2014
  • 优先权号:   US999912

▎ 摘  要

NOVELTY - A highly oriented graphitic film with thickness of less than or equal to 0.1 mm and physical density of greater than or equal to 1.8 g/cm3 is produced by preparing dispersion of graphene oxide (GO) or chemically functionalized graphene (CFG) having GO or CFG sheets dispersed in liquid medium; dispensing and depositing GO or CFG dispersion on surface of supporting substrate to form layer of GO or CFG; partially or completely removing liquid medium from layer of GO or CFG; thermally reducing dried GO or CFG layer; further heat-treating porous layer of reduced GO or CFG; and compressing porous graphitic film. USE - Production of highly oriented graphitic film for microelectronic device, such as smart phone, tablet computer, flat-panel display, flexible display, LED lighting device, electronic watch, wearable electronic device, digital camera, or microelectronic communications device (all claimed). ADVANTAGE - The highly oriented graphitic film which exhibits unprecedented combination of exceptionally high thermal conductivity, high electrical conductivity, high elastic modulus, and high tensile strength can be cost-effectively produced. DETAILED DESCRIPTION - A highly oriented graphitic film with thickness of less than or equal to 0.1 mm and physical density of greater than or equal to 1.8 g/cm3 is produced by preparing dispersion of GO or CFG having GO or CFG sheets dispersed in liquid medium, where GO sheets contain oxygen content of greater than or equal to 5 wt.% or CFG sheets contain non-carbon element content of greater than or equal to 5 wt.%, and GO or CFG sheets are in an amount sufficient to form liquid crystal phase in liquid medium; dispensing and depositing GO or CFG dispersion on surface of supporting substrate to form layer of GO or CFG by subjecting liquid crystal phase to orientation-inducing stress; partially or completely removing liquid medium from layer of GO or CFG to form dried GO or CFG layer having layer thickness of less than or equal to 200 mu m and having inter-plane spacing d002 of 0.4-1.2 nm as determined by X-ray diffraction; thermally reducing dried GO or CFG layer at 1st heat treatment temperature of greater than or equal to 80 degrees C for a sufficient period of time to produce porous layer of reduced GO or CFG; further heat-treating porous layer of reduced GO or CFG at 2nd heat treatment temperature higher than 1st heat treatment temperature for a sufficient period of time to produce porous graphitic film having inter-plane spacing d002 of less than or equal to 0.4 nm and oxygen content or non-carbon element content of less than or equal to 1 wt.%; and compressing porous graphitic film.