▎ 摘　　要

NOVELTY - The method involves providing a germanium on insulator (GOI) structure comprising an insulating substrate, and a germanium layer formed on the insulating substrate. The GOI structure is annealed to form an array of germanium quantum dots on the insulating substrate. A graphene quantum dot array is formed on the tantalum quantum dot array. Each of the graphene quantum dots in the graphene quantum dot array has a one-to-one correspondence with each of the germanium quantum dots in the germanium quantum dot array, and the graphene quantum dots encapsulate the germanium quantum dots. The germanium quantum dot array in the structure is subjected to an oxidative volatilization treatment to remove the germanium quantum dot array, thus realizing the direct preparation of the graphene quantum dot array on the insulating substrate. USE - Method for directly preparing graphene quantum dot array on insulating substrate. ADVANTAGE - The problem of the inability to prepare an array of ordered graphene quantum dot arrays is solved. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating method for directly preparing graphene quantum dot array on insulating substrate. (Drawing includes non-English language text)