▎ 摘　　要

NOVELTY - An electronic device comprises a body including a single crystal region on its major surface. The single crystal region has a hexagonal crystal lattice substantially lattice-matched to graphene. At least one epitaxial layer (44) of graphene is disposed on the single crystal region. The surface region comprises a multi-layered single crystal hexagonal boron nitride or a wide band gap semiconductor. The graphene layer is deposited by molecular beam epitaxy from a vitreous carbon source, or by chemical vapor deposition. USE - For FET. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) field effect transistor (FET) (40) comprising a channel region coupling source and drain regions to one another, a gate region for applying voltage to the channel region to control the flow of current between the source in drain regions, and the electronic device, where the channel region includes a portion of the graphene layer; and (2) method of making the electronic device. DESCRIPTION OF DRAWING(S) - The figure is a schematic, top view of FET. FET (40) Insulative layer (42) Graphene Layer (44) Insulator region (48) Gate electrode (49)