• 专利标题:   Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.
  • 专利号:   CN111979525-A
  • 发明人:   LIU Y, YAO S, GUO C, FAN T
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   C01B032/186, C23C016/02, C23C016/26, C23C016/52, C23C016/54, C23C016/56, H01B013/00
  • 专利详细信息:   CN111979525-A 24 Nov 2020 C23C-016/26 202004 Pages: 11 Chinese
  • 申请详细信息:   CN111979525-A CN10639924 06 Jul 2020
  • 优先权号:   CN10639924

▎ 摘  要

NOVELTY - Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition and doping in a tubular furnace, which is respectively connected with carbon source, reducing gas source and doping source. The doping source includes graphene material with p-type doping effect or graphene material with n-type doping effect. USE - The method is useful for preparing high-conductivity graphene/copper composite wire. ADVANTAGE - The method: ensures high quality synthesis of graphene itself; improves thickness of deposition and doped layer under condition of high conductivity of graphene; ensures excellent thickness and conductivity of deposition and doped graphene; and produces excellent graphene/copper composite wire by combining graphene and substrate material interface. The composite wire has conductivity of 7.8x 107 S/m.