▎ 摘　　要

NOVELTY - Integrated structure comprises an N-type silicon base region (01) for manufacturing a crystalline silicon solar battery and a graphene bypass diode structure. A P+-type crystalline silicon emitting region (02) is provided on a light-facing surface of the N-type silicon base region. An N+-type silicon doped region (03) is provided on a backlight surface of the N-type silicon base region. An isolation groove (04) is provided on the N+-type silicon doped region for preventing leakage at a junction of the crystalline silicon solar battery and a graphene diode. A passivation layer (06) is provided with a backlight surface electrode window and a target window. A backlight surface electrode (07) is provided on the backlight surface electrode window. A graphene surface electrode (08) is provided on a backlight surface of a graphene film layer (05). A light-facing surface electrode (09) is provided on the P+-type crystalline silicon emitting region. USE - Integrated structure. ADVANTAGE - The graphene bypass diode is connected in parallel to each solar battery chip as a reverse protection diode, which can reduce temperature rise of shadow battery caused by local shadow, and solves the problem that a series of solar battery chip under protection of reverse diode cannot output power to outside when the solar battery chip is in shadow, thus reducing power loss of photovoltaic component. The graphene film is adhered on a backlight surface of the solar panel chip, which does not shield sunlight, does not occupy light absorption area of solar panel chip, and does not affect power generation of solar battery chip. By adjusting area of the graphene diode, the current it can withstand can be controlled without affecting packaging and power generation of the component. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) preparation method of integrated structure; and (2) a topological structure. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional structure schematic diagram of integrated structure. N-type silicon base region (01) P+-type crystalline silicon emitting region (02) N+-type silicon doped region (03) Isolation groove (04) Graphene film layer (05) Passivation layer (06) Backlight surface electrode (07) Graphene surface electrode (08) Light-facing surface electrode (09)