▎ 摘　　要

NOVELTY - Preparing graphene nanobelt comprises (i) polishing the silicon carbide substrate wafer, pre-processing the substrate, pre-processing includes chemical cleaning, etching and removing hydrogen oxide, to obtain silicon carbide substrate sheet having periodic single atomic layer of smooth, (ii) using silicon carbide substrate has a single atom layer step of directly using the obtained on silicon carbide epitaxy growing graphene nanobelt. USE - The method is useful for preparing graphene nanobelt (claimed). ADVANTAGE - The method utilizes the atomic steps and flatness of the silicon carbide, adjusts the temperature, pressure to make graphene growth in the steps to become adjustable size of the graphene nanobelt, produces graphene nanoribbons (GNRs) with less defective, and controllable size.