• 专利标题:   Transferring graphene involves growing graphene layer on substrate, depositing stress layer on graphene layer, spin-coating bonding glue on stress layer, attaching rigid substrate, peeling rigid substrate followed by performing Vander Waals bonding on laminated structure, and etching stress layer.
  • 专利号:   CN116143111-A
  • 发明人:   TIAN Z, XUE Z, ZHANG M, DI Z, JIANG H
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B032/194
  • 专利详细信息:   CN116143111-A 23 May 2023 C01B-032/194 202352 Chinese
  • 申请详细信息:   CN116143111-A CN10072241 17 Jan 2023
  • 优先权号:   CN10072241

▎ 摘  要

NOVELTY - Method for transferring graphene involves: (i) providing a substrate; (ii) growing a graphene layer on the upper surface of substrate; (iii) depositing a stress layer on the upper surface of graphene layer; (iv) spin-coating temporary bonding glue on the upper surface of stress layer; (v) attaching the transition temporary rigid substrate to the upper surface of temporary bonding glue under vacuum environment; (vi) peeling off the transition temporary rigid substrate from the substrate by mechanical peeling; (vi) peeling of the laminated structure formed by graphene layer, stress layer and the temporary bonding glue from the substrate; (vii) performing Vander Waals bonding on the laminated structure and the target substrate under vacuum environment; (viii) separating the transition temporary rigid substrate by de-bonding; (ix) cleaning to remove the temporary bonding glue; and (x) etching the stress layer to obtaining graphene structure on the target substrate. USE - Method for transferring graphene. ADVANTAGE - The method provides graphene having no damage and no wrinkle, with residual metal traces, without doping.