• 专利标题:   Method for in-situ preparing high-reduction-rate oxide graphene thin film, involves covering upper substrate above rectangular groove, constructing reaction system, and drying reaction system to form reduction oxidation graphene film.
  • 专利号:   CN116216701-A
  • 发明人:   GUAN R, CUI H, YANG D, FAN L, YANG Z, ZHANG J
  • 专利权人:   UNIV DALIAN JIAOTONG
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN116216701-A 06 Jun 2023 C01B-032/184 202354 Chinese
  • 申请详细信息:   CN116216701-A CN10205416 06 Mar 2023
  • 优先权号:   CN10205416

▎ 摘  要

NOVELTY - The method involves taking a polished metal plate as a lower substrate and an upper substrate, where the metal plate is an active metal plate such as aluminium plate, magnesium plate and zinc plate. Adhesive tape is used to seal an edge of the lower substrate such that a rectangular groove is formed in the lower substrate. An oxidized graphene solution is spreaded in the rectangular groove. The upper substrate is covered above the rectangular groove. A reaction system is constructed. The reaction system is dried to form a reduction oxidation graphene film. USE - Method for in-situ preparing a high-reduction-rate oxide graphene thin film. ADVANTAGE - The method enables coating the uniformly dispersed graphene aqueous solution between two active metal plates with rough surfaces, so that the surface of the active metal plate can be polished and rough to contact the reaction area, and reduction of the graphene oxide can be realized during the low-temperature heating and drying process, thus directly obtaining self-assembly reduction oxide graphene film with high reduction rate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram illustrating in-situ preparation of a high-reduction-rate oxide graphene thin film. (Drawing includes non-English language text).