1. 平台首页
  2. 国际专利信息
  • 专利标题:   Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.
  • 专利号:   WO2013052939-A1, CA2851428-A1, KR2014093944-A, EP2763936-A1, US2015037515-A1, US9187824-B2, EP2763936-A4
  • 发明人:   FISHER T S, KUMAR A
  • 专利权人:   PURDUE RES FOUND, PURDUE RES FOUND, FISHER T S, KUMAR A, PURDUE RES FOUND
  • 国际专利分类:   B01J019/12, C01B031/02, C01B031/04, C23C016/26, C23C016/455, C23C016/511, B82Y030/00, B82Y040/00, C23C016/00, H05H001/24
  • 专利详细信息:   WO2013052939-A1 11 Apr 2013 C01B-031/02 201328 Pages: 57 English
  • 申请详细信息:   WO2013052939-A1 WOUS059159 07 Oct 2012
  • 优先权号:   US544764P, CA2851428, US14350168, KR712298

▎ 摘　　要

NOVELTY - Synthesizing graphene film comprises (a) providing a copper foil, (b) placing the foil in a microwave plasma chemical vapor deposition chamber, (c) evacuating the chamber to 2 Torr, (d) providing hydrogen gas to the chamber, (e) exposing the foil to plasma, and (f) providing methane gas and maintaining to 10 Torr in the chamber. USE - The method is useful for synthesizing graphene film (claimed), preferably nitrogen-doped graphene film. ADVANTAGE - The method is capable of rapidly and easily synthesizing graphene film in an industrial manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for synthesizing doped graphene film comprising providing 25 mu m thickness of copper foil, placing the foil in a microwave plasma chemical vapor deposition chamber, elevating the foil above a molybdenum puck, evacuating the chamber to 2 Torr, providing hydrogen gas to the chamber, exposing the foil to 400 W plasma, providing methane gas, and maintaining nitrogen gas to 10 Torr in the chamber.