• 专利标题:   UV detector of graphene coated silicon carbide nano wire, has silicon oxide/silicon substrate that includes graphene layer whose both ends are arranged with electrodes, and whose back side is arranged with back gate electrode.
  • 专利号:   CN105633190-A, CN105633190-B
  • 发明人:   CHEN X, GUO L, JIA Y
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   B82Y030/00, B82Y040/00, H01L031/02, H01L031/0312, H01L031/0352, H01L031/102
  • 专利详细信息:   CN105633190-A 01 Jun 2016 H01L-031/102 201675 Pages: 7 Chinese
  • 申请详细信息:   CN105633190-A CN10602352 31 Oct 2014
  • 优先权号:   CN10602352

▎ 摘  要

NOVELTY - The UV detector has silicon oxide/silicon substrate (4) that includes graphene layer (2) coated on silicon carbide nanowire (1). Two electrodes (3) are arranged on both ends of graphene layer, and back side of substrate is arranged with back gate electrode (5). A lead wire (6) is passed on ends of electrodes and back gate electrode. USE - UV detector of graphene coated silicon carbide nano wire. ADVANTAGE - The UV detector having micro-cavity structure enhances mutual effect of light, inhibits photon-generated carrier, and promotes transfer efficiency of photon-generated carrier with excellent electron transporting characteristics. DESCRIPTION OF DRAWING(S) - The drawing shows longitudinal cross-sectional views of the UV detector. Silicon carbide nanowire (1) Graphene layer (2) Electrodes (3) Silicon oxide/silicon substrate (4) Back gate electrode (5) Lead wire (6)