▎ 摘　　要

NOVELTY - Nonvolatile memory device has many memory cell strings (CS), each of the many memory cell strings including many insulating spacers (311) each extending in a first direction, many gate electrodes (312) each extending in the first direction and alternately arranged with the many insulating spacers in a second direction perpendicular to the first direction, and many contacts respectively arranged to contact a side surface of the many gate electrodes respectively corresponding to the many contacts. USE - Nonvolatile memory device for use in cellular phone, digital camera, portable digital assistant (PDA), mobile computer device, stationary computer device, and other devices. ADVANTAGE - The nonvolatile memory device has high density and low power consumption and capable of allowing a random access to a memory cell may be required. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure of a respective memory cell string. 311Insulating spacers 312Gate electrodes 330Drain 340Bit line CSCell strings