• 专利标题:   Buried silicon waveguide based graphene hybrid plasma modulator, has metal electrode for receiving electric signal of upper and lower single-layer graphenes under opening and closing condition of modulator main body.
  • 专利号:   CN108873391-A
  • 发明人:   HU G, ZHU Y, YUN B, ZHANG R, CUI Y
  • 专利权人:   UNIV SOUTHEAST
  • 国际专利分类:   G02F001/00, G02F001/01
  • 专利详细信息:   CN108873391-A 23 Nov 2018 G02F-001/00 201905 Pages: 7 Chinese
  • 申请详细信息:   CN108873391-A CN10763703 12 Jul 2018
  • 优先权号:   CN10763703

▎ 摘  要

NOVELTY - The modulator has a modulator main body formed with six layers of a structure when two silver plasma waveguides are determined from top to bottom. A graphite sandwich structure is fixed with an alumina insulating layer, a graphite sandwich structure, an alumina isolation layers, a buried silicon wave guiding part and silicon dioxide substrate. The graphite sandwich structure is provided with upper single layer graphene and lower single layer graphene and connected with an intermediate aluminum oxide isolating medium. The upper and lower single-layer graphenes are contacted with left and right metal electrodes. The metal electrode receives an electric signal of the upper and lower single-layer graphenes under opening and closing condition of the modulator main body. USE - Buried silicon waveguide based graphene hybrid plasma modulator. ADVANTAGE - The modulator has wide range of application, and realizes high optical modulation depth and bandwidth determining process to obtain an application in an integrated high-speed-optical network and reduces transmission loss. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a buried silicon waveguide based graphene hybrid plasma modulator.