• 专利标题:   Preparation of graphene film involves subjecting non-metallic substrate in oxygen plasma cleaning machine, sending non-metallic substrate into vacuum reaction furnace, adding hydrogen, heat preserving, and placing substrate in quartz glass.
  • 专利号:   CN103193224-A, CN103193224-B
  • 发明人:   LI P, BAO Q, CHEN C, XU M, YUAN J, LIN S
  • 专利权人:   UNIV SOOCHOW
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103193224-A 10 Jul 2013 C01B-031/04 201381 Pages: 8 Chinese
  • 申请详细信息:   CN103193224-A CN10132019 17 Apr 2013
  • 优先权号:   CN10132019

▎ 摘  要

NOVELTY - A graphene film is prepared by subjecting non-metallic substrate in oxygen plasma cleaning machine, sending non-metallic substrate into vacuum reaction furnace, adding hydrogen, performing heat preservation at 700 degrees C, placing treated non-metallic substrate in quartz glass, subjecting into reactor under vacuum conditions, performing vacuum pumping at less than or equal to 10 mTorr, allowing methane gas to flow into vacuum reaction furnace at 50-350 mTorr, adjusting vacuum pump to maintain pressure, operating vacuum reaction furnace at 10-60 degrees C, and raising temperature to 400-1000 degrees C. USE - Preparation of graphene film (claimed). ADVANTAGE - Preparation process has small equipment, improved reaction speed, is low cost, environment-friendly, reduces energy consumption, and reduces use of chemical reagent, and product has improved quality. DETAILED DESCRIPTION - A graphene film is prepared by subjecting non-metallic substrate in oxygen plasma cleaning machine, sending non-metallic substrate into vacuum reaction furnace, adding hydrogen, performing heat preservation at 700 degrees C, placing treated non-metallic substrate in quartz glass, subjecting into reactor under vacuum conditions, performing vacuum pumping at less than or equal to 10 mTorr, allowing methane gas to flow into vacuum reaction furnace at 50-350 mTorr, adjusting vacuum pump to maintain pressure, operating vacuum reaction furnace at 10-60 degrees C, raising temperature to 400-1000 degrees C, subjecting non-metallic substrate and treating for 5-30 minutes, operating vacuum reaction furnace at 5-30 degrees C, raising temperature to 350-700 degrees C, treating plasma emission source and methane gas for 5-300 minutes, operating vacuum reaction furnace at 10-20 degrees C, adjusting temperature 350-700 degrees C, treating components for 30-90 minutes, stopping heating and slowly cooling to 280-300 degrees C, cooling to less than or equal to 200 degrees C, and finally cooling to room temperature.