▎ 摘　　要

NOVELTY - Synthesizing graphene film comprises: configuring a metal substrate to form a partially confined interior surface of the substrate in fluid communication with a gaseous environment surrounding the metal substrate; loading the metal substrate into a chemical vapor deposition apparatus; heating the metal substrate to 400-1400 degrees C; providing hydrogen gas while maintaining the temperature of the substrate; and providing a gaseous carbon source at a flow rate of 0.1-10 sccm and a pressure of 1-100 mTorr through the chemical vapor deposition apparatus while maintaining temperature of substrate. USE - The method is useful for synthesizing graphene films. ADVANTAGE - The method: synthesizes high-quality, large single-crystal graphene films by suppressing evaporative substrate loss in chemical vapor deposition; is cost-effective and scalable for industrial application; and provides graphene films that exhibit a carrier mobility of greater than 5000 cm2V-1second-1, improved smoother substrate surface associated with flatter graphene domains and re-deposition on top of smaller graphene grains. DETAILED DESCRIPTION - Synthesizing graphene film comprises: configuring a metal substrate to form a partially confined interior surface of the substrate in fluid communication with a gaseous environment surrounding the metal substrate; loading the metal substrate into a chemical vapor deposition apparatus; heating the metal substrate to 400-1400 degrees C; providing hydrogen gas while maintaining the temperature of the substrate; and providing a gaseous carbon source at a flow rate of 0.1-10 sccm and a pressure of 1-100 mTorr through the chemical vapor deposition apparatus while maintaining the temperature of the substrate. The carbon atoms from the gaseous carbon source are deposited onto the confined interior surface of the substrate to form graphene films having a diagonal length of at least 1 mm. An INDEPENDENT CLAIM is also included for the graphene film having a diagonal length greater than 1 mm and an electron mobility of 2000-5200 cm2V-1second-1 made by above method.