• 专利标题:   Gallium arsenide solar cell containing copper thiocyanate hole transport layer comprises structure from bottom to top is gold back electrode, gallium arsenide substrate, copper thiocyanate hole transport layer, and graphene layer.
  • 专利号:   CN111081800-A
  • 发明人:   LI G, ZHANG Z, LIU X, GAO P, YU Y, LIN J
  • 专利权人:   UNIV SOUTH CHINA TECHNOLOGY, CHINA ELECTRONIC TECHNOLOGY GROUP CORP N
  • 国际专利分类:   H01L031/032, H01L031/0352, H01L031/072, H01L031/0735, H01L031/074, H01L031/18
  • 专利详细信息:   CN111081800-A 28 Apr 2020 H01L-031/032 202039 Pages: 7 Chinese
  • 申请详细信息:   CN111081800-A CN11338917 23 Dec 2019
  • 优先权号:   CN11338917

▎ 摘  要

NOVELTY - Gallium arsenide solar cell containing a CuSCN hole transport layer comprises structure from bottom to top is gold back electrode, gallium arsenide (GaAs) substrate, copper thiocyanate (CuSCN) hole transport layer, graphene layer and conductive silver paste top electrode in order. The crystal orientation of the GaAs epitaxial layer is (100) and the doping concentration is 1x 1017-1x 1018 per cubic centimetre. The CuSCN hole transport layer is 50-500 nm. USE - Gallium arsenide solar cell containing copper thiocyanate hole transport layer. ADVANTAGE - The gallium arsenide solar cell has a simple preparation process, cost-effective, and also high photoelectric conversion efficiency and can work stably for a long time. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing GaAs solar cell containing a CuSCN hole transport layer, which involves: (A) using electron beam evaporation method to deposit a layer of gold on the back of the GaAs substrate as the back electrode, and annealing treatment, after the evaporation is completed; (B) using a diamond pen to split the substrate sheet into 1-4cm2 pieces and clean them on the front surface of the substrate; (C) preparing layer of CuSCN hole transport layer by spin coating, and annealing; (D) transferring the graphene taken from the bubble, the graphene floats on the water surface, and using tweezers to hold the substrate sheet with the hole transport layer prepared; (E) making the graphene contact with the hole transport layer, removing it, placing it in a vacuum drying box, and vacuum drying at room temperature for 1-2 hours; (F) soaking in acetone at 50-100 degrees C for 20-40 minutes to remove poly(methyl methacrylate) (PMMA) on the surface of graphene; (G) putting insulating tape on the edge of graphene to reduce leakage; and (H) applying a round of conductive silver paste on the insulating tape with a syringe, and ensuring that the conductive silver paste is in contact with the graphene, and finally heating and drying at 50-100 degrees C for 30-50 minutes to make the battery.