▎ 摘　　要

NOVELTY - Selectively growing graphene by spontaneous pattern transferring, comprises (a) forming a catalyst layer having a catalyst mask pattern on a substrate, (b) forming a metal layer on the catalyst layer for growing graphene, and (c) growing graphene by transferring the catalyst mask pattern on the metal layer spontaneously, and reacting by providing heat and reaction gas containing carbon source to a thin metal film. USE - The method is useful for selectively growing graphene by spontaneous pattern transferring (claimed). ADVANTAGE - The method prevents exposure to residual organic material, and reduction in inherent properties. DETAILED DESCRIPTION - Selectively growing graphene by spontaneous pattern transferring, comprises either: (a) forming a catalyst layer (120) having a catalyst mask pattern on a substrate (110), (b) forming a metal layer on the catalyst layer for growing graphene, and (c) growing graphene by transferring the catalyst mask pattern on the metal layer spontaneously, and reacting by providing heat and reaction gas containing carbon source to a thin metal film (130); or (a1) providing an atomic species layer having a mask pattern on the substrate, (b1) forming the catalyst layer on the provided atomic species layer, (c1) forming the metal layer on the catalyst layer, and (d1) growing graphene by transferring the mask pattern on the metal layer spontaneously, and reacting by providing heat and reaction gas containing carbon source to the thin metal film. An INDEPENDENT CLAIM is also included for selectively grown graphene produced by the above method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of selectively growing graphene. Substrate (110) Catalyst layer (120) Thin metal film (130)