• 专利标题:   Thin film transistor for use in array substrate, has source drain electrode placed on active layer, and graphene layer placed in-between active layer and source drain electrode, where graphene layer includes reel transfer layer.
  • 专利号:   CN104377246-A
  • 发明人:   BO Q
  • 专利权人:   BOE TECHNOLOGY GROUP CO LTD
  • 国际专利分类:   H01L021/34, H01L029/786
  • 专利详细信息:   CN104377246-A 25 Feb 2015 H01L-029/786 201530 Pages: 1 Chinese
  • 申请详细信息:   CN104377246-A CN10524515 08 Oct 2014
  • 优先权号:   CN10524515

▎ 摘  要

NOVELTY - The transistor has a source drain electrode placed on an active layer. A graphene layer is placed in-between the active layer and the source drain electrode. The graphene layer includes a reel transfer layer. USE - Thin film transistor for use in an array substrate (claimed). ADVANTAGE - The transistor has low manufacturing cost, simple manufacturing process and low production cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a thin film transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film transistor.