▎ 摘　　要

NOVELTY - The LED (20) has a substrate (21) and a light-emitting epitaxial layer (22). A first semiconductor layer (221), an active light-emitting layer (222), and a second semiconductor layer (223) that are stacked on one main surface of the substrate. Multiple electrode patterns (23) are buried in the first semiconductor layer or the second semiconductor layer and are connected to each other and distributed in a grid shape. The first semiconductor layer or the second semiconductor layer comprises a first sub-layer and a second sub-layer. The electrode patterns are mounted on a side of the first sub-layer facing away from the substrate. USE - LED such as forward type LED, vertical type LED, front-loading type LED and flip-chip type LED for converting electric current into light in specific wavelength range. ADVANTAGE - The current distribution of LED is effectively improved. The uniformity of current distribution of LED is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing LED. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a LED. LED (20) Substrate (21) Light-emitting epitaxial layer (22) Electrode patterns (23) First semiconductor layer (221) Active light-emitting layer (222) Second semiconductor layer (223)