▎ 摘　　要

NOVELTY - The photoelectric device has a first semiconductor layer and a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are bonded together through a bonding layer. The bonding layer is a graphene thin film. A transfer medium material is selected from a polymethyl methacrylate, a polydimethyl siloxane or an adhesive tape. USE - Photoelectric device e.g. gallium indium phospide/gallium arsenide/indium gallium arsenide/germanium four cascade solar cell (claimed). ADVANTAGE - The ultrahigh times and the resistance loss in concentrator solar cells are reduced to obtain high conversion efficiency. The bonding surface electricity consumption and light loss are avoided. The ductility is utilized to release the stress. The battery can obtain a high voltage and the low current output. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method for manufacturing the photoelectric device; (2) a gallium indium phospide/gallium arsenide/indium gallium arsenide/germanium four cascade solar cell; and (3) a method for manufacturing gallium indium phospide/gallium arsenide/indium gallium arsenide/germanium four cascade solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the four cascade solar cell. (Drawing includes non-English language text)