• 专利标题:   Method for fast growing graphene flower cluster array on foam nickel, involves introducing working gas to plasma generating region in plasma depositing device accommodated with foamed nickel substrate at controlled vacuum state.
  • 专利号:   CN105390300-A, CN105390300-B
  • 发明人:   FENG S, SHEN J, SHI H, WEI X, RAN Q
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   H01G011/86, H01M004/139
  • 专利详细信息:   CN105390300-A 09 Mar 2016 H01G-011/86 201623 Pages: 5 English
  • 申请详细信息:   CN105390300-A CN10980259 23 Dec 2015
  • 优先权号:   CN10980259

▎ 摘  要

NOVELTY - The foam nickel substrate is placed inside the plasma gas phase depositing device. The vacuum degree is controlled at 10-30 mbar. A working gas selected from hydrogen, argon or helium gas is introduced into the radio frequency plasma generating region, and the graphene flower cluster array is grown on the foamed nickel substrate for 0.1-1 hours. USE - Method for fast growing graphene flower cluster array on foam nickel used for electrode used in super capacitor and lithium ion battery. ADVANTAGE - The graphene flower cluster array can be directly formed on a foam nickel substrate, to obtain large ratio table area of the graphene coated foam nickel electrode easily. DESCRIPTION OF DRAWING(S) - The drawing shows the scanning electron microscope image of the graphene flower cluster array grown on foam nickel.