▎ 摘　　要

NOVELTY - The method involves preparing a photo resist support layer with first layer, a photo resist is spin-coated on a single layer of graphene grown on a copper foil to form a photo resist support layer and the plasma growth is destroyed by plasma etching. The graphene is transferred at first substrate. The target substrate of the graphene transfer is subjected to an adhesion layer modification to increase the adhesion between the graphene. The graphene is photolithographic patterned with the firsts ample obtained is subjected to a smooth layer modification that is a layer of material is spin-coated on the upper surface of the photo resist support layer to form a smooth layer to improve the surface smoothness. The sample is washed until the patterned photo resist support layer is completely removed, resulting in the same patterned graphene. USE - Method for transferring and patterning graphene using photo resist support layer. ADVANTAGE - The use of a photo resist support layer to transfer graphene enables clean, non-destructive high-quality transfer, so that the transferred graphene has a flat surface and a complete sheet are achieved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the process for transferring and patterning graphene. (Drawing includes non-English language text)