▎ 摘　　要

NOVELTY - Preparation of vertical organic transistor involves precisely aligning a mask plate with a graphene-bearing silicon dioxide/heavy-doped silicon substrate, depositing a source metal through the mask plate using an evaporator, spin-coating 10 mg/ml poly(dithiophene)-alt-(2,5-bis(2-octyldodecyl)-3,6-bis(thienyl)-pyrrolopyrrole dione) solution (DPPT-TT) as bipolar D-A type organic polymer using a spin coater at 500 rpm for 5 seconds and 1500 rpm for 30 seconds to obtain DPPT-TT film with thickness of 50 nm, precisely aligning with the graphene-bearing silicon dioxide/heavy-doped silicon substrate by continuously using the mask plate, and depositing a drain metal through the mask plate using the evaporator. USE - Preparation of vertical organic transistor used as metal-oxide-semiconductor field-effect transistor in organic electroluminescent flexible display, integrated circuit and smart cards. ADVANTAGE - The method controls the length of the channel by controlling the rotation speed of the spin-coating apparatus. The method can manufacture the ultra-short channel of the nm level without using the photoetching machine. Introducing the graphene into the vertical structure will reduce the contact resistor electrode and the semiconductor between the metal electrode and semiconductor, greatly improve the performance of the device when the channel is shortened, when the organic transistor is easier to generate short channel effect than the inorganic transistor. The channel length limit of the current inorganic transistors can reach 5 nm, the transistor keeps the MOSFET characteristic when channel length is 50 nm by the invention. The opening and closing of the vertical organic transistor can be controlled by adjusting the grid voltage.