▎ 摘　　要

NOVELTY - The TFT structure has multiple layers of graphene quantum carbon substrate (1), a first source, a first drain (9), a first gate insulating layer (13) and a first gate (15). The substrate comprises a first channel region. The first drain region and first source region are located in corresponding portion of substrate. The first channel region is located between first drain region and first source region. The first gate insulating layer is mounted on the first channel region. The first gate is mounted on the first gate insulating layer. USE - Thin film transistor (TFT) structure. ADVANTAGE - The TFT structure has high carrier mobility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of TFT structure. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of TFT structure. Graphene quantum carbon substrate (1) First drain (9) Second gate insulating layer (11) First gate insulating layer (13) First gate (15)