• 专利标题:   Preventing laser gyro gas leakage by performing magnetron sputtering plating copper or nickel, adopting chemical vapor deposition method to grow graphene, and adopting vacuum shield method to detect helium leakage rate.
  • 专利号:   CN111647872-A
  • 发明人:   WANG F, LU G
  • 专利权人:   HUNAN ERLINGBA ADVANCED TECHNOLOGY CO
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/448, G01M003/20
  • 专利详细信息:   CN111647872-A 11 Sep 2020 C23C-016/26 202080 Pages: 9 Chinese
  • 申请详细信息:   CN111647872-A CN10248004 01 Apr 2020
  • 优先权号:   CN10248004

▎ 摘  要

NOVELTY - Method for preventing laser gyro gas leakage based on surface chemical vapor deposition growth of graphene, involves (a) performing magnetron sputtering plating copper or nickel with a thickness of several nm in the region where the cavity length control mirror needs to grow graphene, (b) adopting a chemical vapor deposition method to grow graphene, and (c) adopting a vacuum shield method to detect helium leakage rate before and after using the treatment method. USE - The method is useful for preventing laser gyro gas leakage based on surface chemical vapor deposition growth of graphene. ADVANTAGE - The method utilizes excellent gas barrier properties of graphene, and has stable performance and simple operation, and is economical, and ensures prolonged shelf life of the laser gyroscope.