▎ 摘　　要

NOVELTY - DNA sequencing device comprises e.g. bottom layer contact electrode on the double-side polishing silicon chip. The upper part on bottom layer contact electrode is covered with bottom layer graphene micro-strip. The upper part on bottom layer graphene micro-strip is covered with hexagonal boron nitride micro-strip. The upper part of hexagonal boron nitride micro-strip is covered with top graphite micro-strip. The bottom layer graphene micro-strip, hexagonal boron nitride and top layer micro-strip graphite micro-strip. USE - Used as DNA sequencing device. ADVANTAGE - The device solves the problem of convention solid nanometer hole channel, achieves single-base resolution and directly nanometer hole sequencing. DETAILED DESCRIPTION - DNA sequencing device comprises bottom layer contact electrode on the double-side polishing silicon chip. The upper part on bottom layer contact electrode is covered with bottom layer graphene micro-strip. The upper part on bottom layer graphene micro-strip is covered with hexagonal boron nitride micro-strip. The upper part of hexagonal boron nitride micro-strip is covered with top graphite micro-strip. The bottom layer graphene micro-strip, hexagonal boron nitride and top layer micro-strip graphite micro-strip form one graphene-hexagonal boron nitride-graphite alkene heterojunction structure is connected with the graphenehexagonal boron nitride-graphene nanometer hole An INDEPENDENT CLAIM is also included for manufacturing DNA sequencing device comprising (i)cleaning double-side polishing monocrystalline silicon chip, monocrystalline silicon chip with ratio 1: 4, adding hydrogen peroxide and mixed liquid of sulfuric acid, heating, washing using deionized water, drying silicon piece, (ii) growing a layer of silicon dioxide thin film of oxygen on single crystal silicon chip, (iii) using plasma enhanced chemical vapor phase deposition technique, growing a layer of silicon nitride film on upper part silicon dioxide thin film, (iv) using double-surface photo-etching technique and induction coupling plasma or anisotropic wet etching technique etching out micro-cavity, (vi) using photo-etching technology and reaction ion etching technology manufacture of one rectangular window on the silicon nitride thin film on single crystal silicon, using photo-etching and heat evaporation or electron beam evaporation technique in chromium/gold contact bottom layer electrode and graphene-hexagonal boron nitride graphite alkene heterojunction bottom, using rectangular window for holding suspension of graphene-hexagonal boron nitride-graphite alkene heterojunction structure(vii) using polymethyl methacrylate transfer bottom layer graphene microstrip to contact bottom layer electrode and silicon nitride film on the tunnel as the graphene-hexagonal boron nitride-graphene hetero-junction, (viii) using dielectric medium layer using polymethyl methacrylate transfer hexagonal boron nitride micro-strip to bottom layer micro-strip of graphene, (ix)using polymethyl methacrylate, transferring top graphene micro-strip to hexagonal boron nitride micro-strip of the tunnel as the graphene-hexagonal boron nitride-graphite alkene heterojunction worn electrode, using photo-etching and plasma etching technique and patterned graphene-hexagonal boron nitride-graphite alkene heterojunction structure, (x) using photo-etching and heat evaporation or electron beam evaporation technique in two of chromium/gold top layer contact electrode on top of the graphene strip, (xi) using focus electron beam or focus ion beam technology in the graphene suspension hexagonal boron nitride-graphene heterojunction center, etching 10nm of graphene-hexagonal boron nitride-graphene nano hole, the graphene-hexagonal boron nitridegraphene nano hole in the middle of two of top layer contact electrode, (xii) using graphite alkene-sequencing chip hexagonal boron nitridegraphene nano hole, installing on sequencing reaction cavity in the top layer contact electrode, connecting between the variable voltage source and lengthways weak tunnel electric current, detecting device on bottom layer contact electrode and right side, position for graphene-hexagonal boron nitride in-between graphene nano hole left, right two side of top layer contact electrode, connecting variable voltage source and vertical weak tunnel electric current detecting device, connecting driving single chain DNA molecule passing through graphene in double platinum electrode between two-hexagonal boron nitride-graphene nano hole of variable voltage source and weak ion current detecting device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the DNA sequencing device.