▎ 摘　　要

NOVELTY - The charge trap memory has a three-layer structure which is provided with a substrate (101) which is made of flexible material. A charge tunneling layer (104) is provided on the substrate. A charge trap layer (105) made of graphene oxide is provided on the upper surface of charge tunneling layer. A control gate dielectric blocking layer (106) is formed on the upper surface of the charge trap layer. USE - Graphene oxide-based flexible charge trap memory. ADVANTAGE - The low temperature atomic layer deposition technology is used and the spin coating of graphene oxide at room temperature is performed. The process thermal budget can be reduced. The practical and reliable charge trap memory can be achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of graphene oxide-based flexible charge trap memory. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene oxide-based flexible charge trap memory. Substrate (101) Charge tunneling layer (104) Charge trap layer (105) Control gate dielectric blocking layer (106) Gate electrode (107)