• 专利标题:   Two-stage growth of high density, high electric conductivity, high heat conductivity graphene material, involves obtaining graphene material by two-stage chemical vapor deposition, and controlling graphene layers.
  • 专利号:   CN104973589-A, CN104973589-B
  • 发明人:   BI H, HUANG F, HUANG H
  • 专利权人:   SHANGHAI INST CERAMICS CHINESE ACAD SCI, SHANGHAI INST CERAMICS CHINESE ACAD SCI
  • 国际专利分类:   C01B031/04, C01B032/186
  • 专利详细信息:   CN104973589-A 14 Oct 2015 C01B-031/04 201625 Pages: 9 Chinese
  • 申请详细信息:   CN104973589-A CN10145144 11 Apr 2014
  • 优先权号:   CN10145144

▎ 摘  要

NOVELTY - Two-stage growth of high density, high electric conductivity, high heat conductivity graphene material involves obtaining graphene material by two-stage chemical vapor deposition method, controlling graphene layers to 1-2000 layers, and obtaining graphene material with a microscopic three-dimensional porous structure. USE - Two-stage growth of high density, high electric conductivity, high heat conductivity graphene material (claimed). ADVANTAGE - The two-stage growth of high density, high electric conductivity, high heat conductivity graphene material is enabled effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of graphene material, which involves chemical vapor depositing the ceramic powder as a substrate, coating ceramic powder with graphene to obtain ceramic base/graphene composite powder, grinding and tableting the ceramic base/graphene composite powder, regrowing graphene by chemical vapor deposition to obtain two-stage growth ceramic matrix/graphene composite powder, etching, drying and forming.