• 专利标题:   Producing graphene inserted composite on plane hexagonal boron nitride, comprises e.g. forming a hexagonal boron nitride in a platinum substrate, placing the platinum substrate in a reaction furnace, and introducing carbon supply source.
  • 专利号:   KR1662708-B1
  • 发明人:   KIM G, SHIN H S
  • 专利权人:   UNIST ULSAN NAT SCI TECHNOLOGY INST
  • 国际专利分类:   C01B021/064, C01B031/04
  • 专利详细信息:   KR1662708-B1 06 Oct 2016 C01B-021/064 201674 Pages: 15
  • 申请详细信息:   KR1662708-B1 KR081945 10 Jun 2015
  • 优先权号:   KR081945

▎ 摘  要

NOVELTY - Producing graphene inserted composite on plane hexagonal boron nitride, comprises (a) forming a hexagonal boron nitride in a platinum substrate, and (b) placing the platinum substrate in a reaction furnace, introducing carbon supply source in the reaction furnace, heating, inserting graphene in the plane hexagonal boron nitride to form a pattern. USE - The method is useful for producing graphene inserted composite on plane hexagonal boron nitride (claimed). ADVANTAGE - The graphene inserted composite has magnetic property. DETAILED DESCRIPTION - Producing graphene inserted composite on plane hexagonal boron nitride, comprises either (a) forming a hexagonal boron nitride in a platinum substrate, and (b) placing the platinum substrate in a reaction furnace, introducing carbon supply source in the reaction furnace, heating, inserting graphene in the plane hexagonal boron nitride to form a pattern; or (i) alternately arranging platinum and silicon dioxide to produce substrate with pattern, and (ii) forming a hexagonal boron nitride in the substrate, and (iii) placing the substrate in a reaction furnace, introducing carbon supply source in the reaction furnace, heating, inserting graphene in the plane hexagonal boron nitride.