▎ 摘　　要

NOVELTY - An ultrasonic-assisted grapheme photoresist removing method involves performing whirl coating and drying on graphene that is grown on copper foil by a chemical vapor deposition process through polymethyl methacrylate (PMMA). The graphene case-hardened through the PMMA is transferred to a silicon-silicon dioxide substrate. A graphene sample is placed into an ultrasonic generator. Pure acetone is injected into the sample, analyzed and cleaned. The cleaned sample is rinsed in absolute ethyl alcohol. The rinsed sample is washed by deionized water, dried by using nitrogen and stored. USE - Method for removing ultrasonic-assisted graphene photoresist. ADVANTAGE - The method enables effectively facilitating the dissolving of PMMA adhesive residue, improving cleanliness of the graphene surface, avoiding mixing of the graphene by the substrate due to high temperature annealing, and improving preparation efficiency of the graphene. DETAILED DESCRIPTION - An ultrasonic-assisted grapheme photoresist removing method involves performing whirl coating and drying on graphene that is grown on copper foil by a chemical vapor deposition process through polymethyl methacrylate (PMMA). Iron trichloride (FeCl3) solution is used for etching a lower part of the copper foil. The graphene case-hardened through the PMMA is transferred to a silicon-silicon dioxide substrate. A graphene sample is placed into an ultrasonic generator for ultrasonic treatment. Pure acetone is injected into the sample and analyzed, and the ultrasonic generator is started for cleaning. The sample is taken out after cleaning is finished, and rinsed in absolute ethyl alcohol for 2-20 minutes. The rinsed sample is washed by deionized water for 2-20 minutes, dried by using nitrogen and stored. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for removing ultrasonic-assisted graphene photoresist. '(Drawing includes non-English language text)'